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Other wide bandgap and organic RF-compatible devices and processes are also of interest.

Basic RF-device modeling and reliability aspects are also covered. The circuit aspects covers analog front ends for 5G and beyond, mixers, transceivers, filters, beam formers, switches, LNAs, PAs, tunable passives, antenna arrays, as well as mixed signal implementations in the micro and mm-wave domain. Devices and circuits for RF energy harvesting are also a good fit. Papers are solicited in the areas of analytical, numerical, and statistical approaches to model electronic, optical, and hybrid devices including sensors and interconnects.


Topics include physical and compact models for semiconductor and novel devices, the modeling of interconnects, the modeling and emulation of fabrication processes and equipment, atomistic material modeling, parameter extraction, compact models for advanced and novel technologies, performance benchmarking, and the modeling of reliability and variability mechanisms. Other topics include the modeling of novel computing approaches e.

Lecture 11 - GaAs and InP Devices for Microelectronics

Submissions should advance the state-of-the-art in modeling and simulation or apply existing techniques to gain new insights into device behavior. Papers are solicited on devices, structures, and integration for optoelectronics, displays, and imaging systems.

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Optoelectronics focus is on photonic-electronic process integration schemes and devices advancing the state-of-the-art. There is particular interest in platform technologies enabling energy efficient scaling of optoelectronic applications such as silicon photonics towards and beyond Gbaud, including novel approaches to the integration of light sources, high speed modulators and photodetectors. Furthermore, papers are solicited in the area of large-scale heterogeneous integration of electronic and photonic circuits for optical interconnects, on-chip networks and sensing.

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Papers on quantum photonics for computation, sensing and encryption are also of interest. Displays and imagers include CMOS imagers, high speed and high time-resolution imagers, CCDs, TFTs, organic, amorphous, and polycrystalline devices, as well as emissive and reflective displays. Papers are solicited on discrete and integrated power devices, modules and systems using Si, diamond, and compound semiconductors.

Introduction to Terahertz Solid-State Devices | SpringerLink

Papers exploring the system-level impact of power devices are also of interest. Devices targeting the full range of power and power conversion applications, including automotive, power supplies for computers and data centers, power conditioners for photovoltaic, motor drives and smart grid solid-state transformers and HVDC transmission , and wireless power transfer, are of interest besides fundamental studies on doping, deep-level traps, interface state densities and device reliability for power switches. Papers are solicited in all areas of electrical and physical characterization, reliability evaluation and yield analysis of transistors, interconnects, circuits and systems mainly but not limited to Si-, Ge- and SiGe-based technologies.

Learn more. Over the past few decades, terahertz heterojunction bipolar transistor HBT is increasingly developed. As a result, many reports of HBTs operating at terahertz region have flourished.

Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit

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Modeling technology of InP heterojunction bipolar transistor for THz integrated circuit

Yong Zhang Corresponding Author E-mail address: yongzhang uestc. Read the full text.

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